Deterministic Manipulation of Multi‐State Polarization Switching in Multiferroic Thin Films (Adv. Funct. Mater. 8/2023)
نویسندگان
چکیده
Four-State Nonvolatile Memories In article number 2208244, Deyang Chen and co-workers report that four-state polarization states in multiferroic BiFeO3 thin films are deterministically achieved reversibly controlled through precisely selecting 71° ferroelastic 180° ferroelectric switching paths. This study provides the platform for realization of multi-state memories magnetoelectric coupling based devices.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2023
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202370050